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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

IHY15N120R3

IHY15N120R3

IHY15N120R3 Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247, GREEN, PLASTIC, TO-247HC, 3 PIN; IHY15N120R3
VSKD600-12

VSKD600-12

VSKD600-12 Rectifier Diode, 1 Phase, 2 Element, 600A, 1200V V(RRM), Silicon, ROHS COMPLIANT, SUPER MAGN-A-PAK-3; VSKD600-12
IXTN46N50L

IXTN46N50L

IXTN46N50L Power Field-Effect Transistor, 46A I(D), 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-227B, MINIBLOC-4; IXTN46N50L
VI-J3B-CY

VI-J3B-CY

VI-J3B-CY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-J3B-CY
E15N100

E15N100

E15N100 15A, 1000V, 0.77ohm, N-CHANNEL, Si, POWER, MOSFET, POWER, ISOTOP-4; E15N100
AFT20P060-4NR3

AFT20P060-4NR3

AFT20P060-4NR3 RF POWER, FET; AFT20P060-4NR3
MBRD1035CTLG

MBRD1035CTLG

MBRD1035CTLG Schottky Power Rectifier, Switch-mode, 10 A, 35 V, DPAK (SINGLE GAUGE) TO-252, 75-TUBE; MBRD1035CTLG
IRG4BC30WPBF

IRG4BC30WPBF

IRG4BC30WPBF Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3; IRG4BC30WPBF
ST330S12P0

ST330S12P0

ST330S12P0 Silicon Controlled Rectifier, 520A I(T)RMS, 330000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AE, HERMETIC SEALED, METAL, TO-118, 3 PIN; ST330S12P0
VI-JWB-EY

VI-JWB-EY

VI-JWB-EY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-JWB-EY