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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

2SC3284

2SC3284

2SC3284 Power Bipolar Transistor, 14A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT-100, TO-3P, 3 PIN; 2SC3284
L6008V8TP

L6008V8TP

L6008V8TP 4 Quadrant Logic Level TRIAC, 600V V(DRM), 8A I(T)RMS, TO-251AA, VPAK-3; L6008V8TP
PD15012

PD15012

PD15012 Rectifier Diode, 1 Phase, 2 Element, 150A, 1200V V(RRM), Silicon,; PD15012
STTH120R04TV1

STTH120R04TV1

STTH120R04TV1 400 V, 120 A Ultrafast Switching Rectifier Diode; STTH120R04TV1
SBCP53T1G

SBCP53T1G

SBCP53T1G PNP 80 V Bipolar Transistor, SOT-223 (TO-261) 4 LEAD, 1000-REEL; SBCP53T1G
MII200-12A4

MII200-12A4

MII200-12A4 Insulated Gate Bipolar Transistor, 270A I(C), 1200V V(BR)CES, N-Channel, MODULE-7; MII200-12A4
2MBI150LB-060

2MBI150LB-060

2MBI150LB-060 FUJI Insulated Gate Bipolar Transistor, 150A, 600V, N-Channel
DMR935E10R

DMR935E10R

DMR935E10R Small Signal Bipolar Transistor, 0.05A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSMINI6-F3-B, SC-107C, 6 PIN; DMR935E10R
SQD300A40

SQD300A40

SQD300A40 Power Bipolar Transistor, 300A I(C), 1-Element; SQD300A40
2SD1858TV2R

2SD1858TV2R

2SD1858TV2R Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, ATV, 3 PIN; 2SD1858TV2R