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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

ST230S04P0V

ST230S04P0V

ST230S04P0V Silicon Controlled Rectifier, 360A I(T)RMS, 230000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-209AB, HERMETIC SEALED, METAL, TO-93, 3 PIN; ST230S04P0V
V48B48C250AL2

V48B48C250AL2

V48B48C250AL2 DC-DC Regulated Power Supply Module, 1 Output, 250W, Hybrid; V48B48C250AL2
VI-2NP-IX

VI-2NP-IX

VI-2NP-IX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-2NP-IX
2SC3284

2SC3284

2SC3284 Power Bipolar Transistor, 14A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT-100, TO-3P, 3 PIN; 2SC3284
L6008V8TP

L6008V8TP

L6008V8TP 4 Quadrant Logic Level TRIAC, 600V V(DRM), 8A I(T)RMS, TO-251AA, VPAK-3; L6008V8TP
PD15012

PD15012

PD15012 Rectifier Diode, 1 Phase, 2 Element, 150A, 1200V V(RRM), Silicon,; PD15012
STTH120R04TV1

STTH120R04TV1

STTH120R04TV1 400 V, 120 A Ultrafast Switching Rectifier Diode; STTH120R04TV1
SBCP53T1G

SBCP53T1G

SBCP53T1G PNP 80 V Bipolar Transistor, SOT-223 (TO-261) 4 LEAD, 1000-REEL; SBCP53T1G
MII200-12A4

MII200-12A4

MII200-12A4 Insulated Gate Bipolar Transistor, 270A I(C), 1200V V(BR)CES, N-Channel, MODULE-7; MII200-12A4
2MBI150LB-060

2MBI150LB-060

2MBI150LB-060 FUJI Insulated Gate Bipolar Transistor, 150A, 600V, N-Channel