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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

UV48-12

UV48-12

UV48-12 DC-DC Regulated Power Supply Module, 1 Output, 240W, Hybrid, QUARTER BRICK PACKAGE-11; UV48-12
MIEB101H1200EH

MIEB101H1200EH

MIEB101H1200EH Insulated Gate Bipolar Transistor, 183A I(C), 1200V V(BR)CES,; MIEB101H1200EH
BR506L-G

BR506L-G

BR506L-G Bridge Rectifier Diode, 50A, 600V V(RRM),; BR506L-G
DMN65D8LFB-7B

DMN65D8LFB-7B

DMN65D8LFB-7B Small Signal Field-Effect Transistor, 0.26A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, X1-DFN1006-3, 3 PIN; DMN65D8LFB-7B
FME6G20US60

FME6G20US60

FME6G20US60 Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, 17PM-CA, 17 PIN; FME6G20US60
APTGT150DH120G

APTGT150DH120G

APTGT150DH120G Insulated Gate Bipolar Transistor, 220A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, SP6, 8 PIN; APTGT150DH120G
TIP112TU

TIP112TU

TIP112TU NPN Epitaxial Silicon Darlington Transistor, 1000-TUBE; TIP112TU
VI-B4M-IU

VI-B4M-IU

VI-B4M-IU DC-DC Booster Module, 1 Output, 200W, Hybrid, PACKAGE-9; VI-B4M-IU
M50100CC1600

M50100CC1600

M50100CC1600 Rectifier Diode, 1 Phase, 2 Element, 100A, 1600V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3; M50100CC1600
Q8008NH4TP

Q8008NH4TP

Q8008NH4TP Alternistor TRIAC, 800V V(DRM), 8A I(T)RMS, TO-263AB, TO-263, D2PAK-3; Q8008NH4TP