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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-24R-CX

VI-24R-CX

VI-24R-CX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-24R-CX
CTA12-1200TW

CTA12-1200TW

CTA12-1200TW 4 Quadrant Logic Level TRIAC, 1200V V(DRM), 12A I(T)RMS, TO-220AB, TO-220AB, 3 PIN; CTA12-1200TW
DD100GB80

DD100GB80

DD100GB80 Rectifier Diode; DD100GB80
IXGH40N60C2

IXGH40N60C2

IXGH40N60C2 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN; IXGH40N60C2
VI-B7F-IU

VI-B7F-IU

VI-B7F-IU DC-DC Booster Module; VI-B7F-IU
IGW40N65F5FKSA1

IGW40N65F5FKSA1

IGW40N65F5FKSA1 Insulated Gate Bipolar Transistor, 74A I(C), 650V V(BR)CES, N-Channel,; IGW40N65F5FKSA1
M5010045V

M5010045V

M5010045V Silicon Controlled Rectifier, 100000mA I(T), 1200V V(RRM), 2 Element, MODULE-6; M5010045V
6MBI450U4-170

6MBI450U4-170

6MBI450U4-170 IGBT Module In-stock / Fuji Electric: 1700V 450A 6-in-1 three-phase bridge. U4 CSTBT technology. 90-day warranty, industrial drives. Global fast shipping. Get quote.
EFE19G

EFE19G

EFE19G Silicon Controlled Rectifier, 1400V V(RRM), 3 Element, ROHS COMPLIANT PACKAGE-8; EFE19G
2N5089

2N5089

2N5089 Small Signal Bipolar Transistor, 0.05A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN; 2N5089