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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

CM600YE2N-12F

CM600YE2N-12F

CM600YE2N-12F IGBT Module In-stock / Mitsubishi: 600V 600A. H-Bridge integration for UPS & inverters. 90-day warranty. Global shipping. Contact our sales team.
QM50DY-2H

QM50DY-2H

QM50DY-2H Mitsubishi Transistor Modules Medium Power Switching Use Insulated Type. ;
BSM15GD120DN2E3224

BSM15GD120DN2E3224

BSM15GD120DN2E3224 IGBT Module by Infineon: 1200V, 15A dual with integrated NTC. 90-day warranty, ideal for compact motor drives. Global shipping. Request quote now.
Q2010N5RP

Q2010N5RP

Q2010N5RP 4 Quadrant Logic Level TRIAC, 200V V(DRM), 10A I(T)RMS, TO-263AB, TO-263, D2PAK-3; Q2010N5RP
GBU8G-BP

GBU8G-BP

GBU8G-BP Bridge Rectifier Diode, 1 Phase, 8A, 400V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBU, 4 PIN; GBU8G-BP
MJ100BE55

MJ100BE55

MJ100BE55 Power Bipolar Transistor, 100A I(C), 2-Element; MJ100BE55
POT100-08

POT100-08

POT100-08 Bridge Rectifier Diode, 3 Phase, 100A, 800V V(RRM), Silicon; POT100-08
170M7060

170M7060

170M7060 Electric Fuse, 1400A, 690VAC, 200000A (IR), Inline/holder,; 170M7060
APT8030JN

APT8030JN

APT8030JN Power Field-Effect Transistor, 27A I(D), 800V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4; APT8030JN
F1842SD1000

F1842SD1000

F1842SD1000 Silicon Controlled Rectifier, 62.8A I(T)RMS, 40000mA I(T), 1000V V(RRM), 2 Element, ROHS COMPLIANT PACKAGE-7; F1842SD1000