SLA5037 Power Field-Effect Transistor, 10A I(D), 100V, 0.08ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIP-12; SLA5037
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.