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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

P2H10M441L

P2H10M441L

P2H10M441L Power Field-Effect Transistor, 50A I(D), 450V, 0.085ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8; P2H10M441L
VI-2NW-EV

VI-2NW-EV

VI-2NW-EV DC-DC Regulated Power Supply Module, 1 Output, 150W, Hybrid,; VI-2NW-EV
VI-J1P-CW

VI-J1P-CW

VI-J1P-CW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid, HALF BRICK PACKAGE-9; VI-J1P-CW
GBJ2010

GBJ2010

GBJ2010 Bridge Rectifier Diode, 1 Phase, 20A, 1000V V(RRM), Silicon, PLASTIC, GBJ, 4 PIN; GBJ2010
MMBD4448V-TP

MMBD4448V-TP

MMBD4448V-TP Rectifier Diode, 2 Element, 0.25A, 80V V(RRM), Silicon, PLASTIC PACKAGE-6; MMBD4448V-TP
IXGH20N60

IXGH20N60

IXGH20N60 Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AD,; IXGH20N60
VI-A66-IQ

VI-A66-IQ

VI-A66-IQ Analog Circuit, 1 Func, PACKAGE-9; VI-A66-IQ
FJPF5200OTU

FJPF5200OTU

FJPF5200OTU Power Bipolar Transistor; FJPF5200OTU
DRA3143Z0L

DRA3143Z0L

DRA3143Z0L Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSSMINI3-F2-B, SC-105AA, 3 PIN; DRA3143Z0L
PPD1R5-24-1212

PPD1R5-24-1212

PPD1R5-24-1212 Analog Circuit,; PPD1R5-24-1212