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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

LS411460

LS411460

LS411460 Rectifier Diode, 1 Phase, 1 Element, 600A, 1400V V(RRM), Silicon, POW-R-BLOK-2; LS411460
6DI50Z-120

6DI50Z-120

6DI50Z-120 IGBT Module In-stock / Fuji Electric: 1200V 50A. Reliable motor power control. 90-day warranty, VFD applications. Global shipping. Get quote.
VI-B6F-CV

VI-B6F-CV

VI-B6F-CV DC-DC Booster Module, 150W; VI-B6F-CV
2N4377

2N4377

2N4377 Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element; 2N4377
Q6015R5TP

Q6015R5TP

Q6015R5TP TRIAC, 600V V(DRM), 15A I(T)RMS, TO-220AB, TO-220AB, 3 PIN; Q6015R5TP
VI-B31-EV

VI-B31-EV

VI-B31-EV DC-DC Booster Module, 1 Output, 150W, Hybrid, 4.600 X 2.400 INCH, 0.500 INCH HEIGHT, MODULE-9; VI-B31-EV
20WB60

20WB60

20WB60 Insulated Gate Bipolar Transistor, 29A I(C), 600V V(BR)CES, N-Channel, MINI PACKAGE-23; 20WB60
HSMS-2818-TR2G

HSMS-2818-TR2G

HSMS-2818-TR2G Mixer Diode, Silicon, ROHS COMPLIANT PACKAGE-4; HSMS-2818-TR2G
S4004DS1RP

S4004DS1RP

S4004DS1RP Silicon Controlled Rectifier, 4A I(T)RMS, 2500mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-252AA, DPAK-3; S4004DS1RP
HSMS-282R-TR2G

HSMS-282R-TR2G

HSMS-282R-TR2G Mixer Diode, C Band, Silicon, LEAD FREE, MINIATURE, SC-70, 6 PIN; HSMS-282R-TR2G