IRGP4262D-EPBF Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel,; IRGP4262D-EPBF
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.