1MBI150NK-060 Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, M232, 7 PIN; 1MBI150NK-060
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.