IGBT Modules - Transistors from Mitsubishi & Fuji - Page 2189

SI3905DV-T1-E3

SI3905DV-T1-E3 Small Signal Field-Effect Transistor, 8V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193C, ROHS COMPLIANT, TSOP-6; SI3905DV-T1-E3

Vishay Siliconix Qty: 2013pcs

KS624530

KS624530 Power Bipolar Transistor, 300A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, MODULE-4; KS624530

POWEREX Qty: 337pcs

MUBW30-06A7

MUBW30-06A7 Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel,; MUBW30-06A7

IXYS Qty: -162pcs

IRFZ14SPBF

IRFZ14SPBF Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN; IRFZ14SPBF

Vishay Siliconix Qty: 1376pcs

MCMA260PD1600YB

MCMA260PD1600YB Silicon Controlled Rectifier, 412A I(T)RMS, 262000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 Element, ROHS COMPLIANT, Y4, 5 PIN

IXYS Qty: 1585pcs Price: US$27

IXXN100N60B3H1

IXXN100N60B3H1 Insulated Gate Bipolar Transistor, 170A I(C), 600V V(BR)CES, N-Channel, MINIBLOC-4

IXYS Qty: 980pcs Price: US$15

VS-MBRD650CTTRLPBF

VS-MBRD650CTTRLPBF DIODE 50 V, SILICON, RECTIFIER DIODE, TO-252AA, ROHS COMPLIANT, PLASTIC, SIMILAR TO TO-252AA, DPAK-3, Rectifier Diode; VS-MBRD650CTTRLPBF

Vishay Semiconductor Diodes Division Qty: 1914pcs

26MT140

26MT140 Bridge Rectifier Diode, 3 Phase, 25A, 1400V V(RRM), Silicon, ROHS COMPLIANT, D-63, 5 PIN; 26MT140

Vishay Qty: 1777pcs

DMC964030R

DMC964030R Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSMINI6-F3-B, SC-107C, 6 PIN; DMC964030R

Panasonic Electronic Components - Semiconductor Products Qty: 774pcs

TTB6C135N18

TTB6C135N18 Trigger Device,; TTB6C135N18

EUPEC Qty: 33pcs