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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-B3X-EV

VI-B3X-EV

VI-B3X-EV DC-DC Booster Module, 150W; VI-B3X-EV
DRA9124T0L

DRA9124T0L

DRA9124T0L Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSMINI3-F3-B, SC-89, 3 PIN; DRA9124T0L
IRGPS60B120KDP

IRGPS60B120KDP

IRGPS60B120KDP Insulated Gate Bipolar Transistor, 105A I(C), 1200V V(BR)CES, N-Channel, TO-274AA, LEAD FREE, SUPER-247, 3 PIN; IRGPS60B120KDP
IXTP450P2

IXTP450P2

IXTP450P2 Power Field-Effect Transistor, 16A I(D), 500V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3; IXTP450P2
PD55HB160

PD55HB160

PD55HB160 Silicon Controlled Rectifier, 55000mA I(T), 1600V V(RRM); PD55HB160
VI-20L-IX

VI-20L-IX

VI-20L-IX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid, MODULE-9; VI-20L-IX
VI-J4Y-CY

VI-J4Y-CY

VI-J4Y-CY DC-DC Regulated Power Supply Module, 1 Output, Hybrid,; VI-J4Y-CY
MI-27L-IX

MI-27L-IX

MI-27L-IX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; MI-27L-IX
VWI35-06P1

VWI35-06P1

VWI35-06P1 Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, ECOPAC-19; VWI35-06P1
MSKD60-18

MSKD60-18

MSKD60-18 Rectifier Diode, 1 Phase, 2 Element, 60A, 1800V V(RRM), Silicon, CASE D1, 3 PIN; MSKD60-18