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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

FDD86102LZ

FDD86102LZ

FDD86102LZ N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 35 A, 22.5 mΩ, 2500-REEL; FDD86102LZ
IKA15N65H5XKSA1

IKA15N65H5XKSA1

IKA15N65H5XKSA1 Insulated Gate Bipolar Transistor, 14A I(C), 650V V(BR)CES, N-Channel,; IKA15N65H5XKSA1
VI-224-CW

VI-224-CW

VI-224-CW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid, MODULE-9; VI-224-CW
R7201809

R7201809

R7201809 Powerex Rectifier Diode, 1 Phase, 1 Element, 900A, 1800V Silicon
CD611216B

CD611216B

CD611216B Rectifier Diode, 1 Phase, 2 Element, 160A, 1200V V(RRM), Silicon, POW-R-BLOK-3; CD611216B
BC33740BU

BC33740BU

BC33740BU NPN Bipolar Transistor, 10000-BLKBG; BC33740BU
2SC4213BTE85LF

2SC4213BTE85LF

2SC4213BTE85LF TRANSISTOR,BJT,NPN,20V V(BR)CEO,300MA I(C),SC-70; 2SC4213BTE85LF
APTGT50X60T3G

APTGT50X60T3G

APTGT50X60T3G Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP3, 25 PIN; APTGT50X60T3G
CM4212A2

CM4212A2

CM4212A2 Silicon Controlled Rectifier, 39A I(T)RMS, 25000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, POW-R-BLOK-5; CM4212A2
MMO74-16IO6

MMO74-16IO6

MMO74-16IO6 Silicon Controlled Rectifier, 53A I(T)RMS, 34000mA I(T), 1600V V(DRM), 1600V V(RRM), 2 Element, MINIBLOC-4; MMO74-16IO6