2SD1207S-AE Bipolar Transistor, 50V, 2A, Low VCE(sat) NPN Single MP hFE = 140-280, TO-92 3 8.5x6.0 / MP, 1000-REEL; 2SD1207S-AE
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.