IGBT Modules - Transistors from Mitsubishi & Fuji - Page 2351

2SC4132T100P

2SC4132T100P Small Signal Bipolar Transistor, 2A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, MPT3, SC-62, 3 PIN; 2SC4132T100P

Rohm Qty: 2358pcs

AON6280

AON6280 Power Field-Effect Transistor, 85A I(D), 80V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, DFN-8; AON6280

Alpha & Omega Semiconductor Inc Qty: 6280pcs

VI-2TH-EW

VI-2TH-EW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid,; VI-2TH-EW

VICOR Qty: 108pcs

SMA5131

SMA5131 Power Field-Effect Transistor, 2A I(D), 250V, 1.8ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMA, 12 PIN; SMA5131

Sanken Qty: 2331pcs

TT570N12

TT570N12 Silicon Controlled Rectifier, 570000mA I(T), 1200V V(RRM); TT570N12

EUPEC Qty: 9pcs

S4055NTP

S4055NTP Silicon Controlled Rectifier, 55A I(T)RMS, 35000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3; S4055NTP

Littelfuse Inc Qty: 498pcs

CM150TF-12H

CM150TF-12H Mitsubishi Electric IGBT module for commercial string inverter power stages, rated 600V and 150A, for global sourcing support.

Mitsubishi Qty: 560pcs Price: US$110

VI-2WH-CX

VI-2WH-CX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-2WH-CX

VICOR

TD250N18

TD250N18 Silicon Controlled Rectifier, 410A I(T)RMS, 250000mA I(T), 1800V V(DRM), 1800V V(RRM), 1 Element, MODULE-5; TD250N18

EUPEC Qty: 153pcs

VI-27D-EX

VI-27D-EX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-27D-EX

VICOR Qty: 8pcs