SIA914DJ-T1-E3 Power Field-Effect Transistor, 4.5A I(D), 20V, 0.053ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SC-70, POWERPAK, 6 PIN; SIA914DJ-T1-E3
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.