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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

APT10026JN

APT10026JN

APT10026JN 33A, 1000V, 0.26ohm, N-CHANNEL, Si, POWER, MOSFET, ISOTOP-4; APT10026JN
BC489BZL1G

BC489BZL1G

BC489BZL1G Transistor Silicon Plastic NPN, TO-92 (TO-226) 5.33mm Body Height, 2000-FNFLD; BC489BZL1G
VI-B54-IV

VI-B54-IV

VI-B54-IV DC-DC Booster Module, 1 Output, 150W, Hybrid, 4.600 X 2.400 INCH, 0.500 INCH HEIGHT, MODULE-9; VI-B54-IV
VI-BNP-IV

VI-BNP-IV

VI-BNP-IV DC-DC Booster Module, 150W; VI-BNP-IV
T600101504BT

T600101504BT

T600101504BT Silicon Controlled Rectifier, 235A I(T)RMS, 150000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-93, HERMETIC SEALED, T60, 3 PIN; T600101504BT
5082-3081

5082-3081

5082-3081 Pin Diode, 100V V(BR), Silicon, HERMETIC SEALED, GLASS PACKAGE-2; 5082-3081
STBV42G-AP

STBV42G-AP

STBV42G-AP 1000mA, 400V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, ROHS COMPLIANT, TO-92AP, 3 PIN; STBV42G-AP
VI-BNM-EV

VI-BNM-EV

VI-BNM-EV DC-DC Booster Module; VI-BNM-EV
IRGS10B60KDPBF

IRGS10B60KDPBF

IRGS10B60KDPBF Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3; IRGS10B60KDPBF
MDA600-12N1

MDA600-12N1

MDA600-12N1 Rectifier Diode, 1 Phase, 2 Element, 883A, 1200V V(RRM), Silicon, MODULE-3; MDA600-12N1