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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

T507124034AQ

T507124034AQ

T507124034AQ Silicon Controlled Rectifier, 63A I(T)RMS, 63000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-94, TO-94, 3 PIN; T507124034AQ
VI-B5L-IW

VI-B5L-IW

VI-B5L-IW DC-DC Booster Module, 1 Output, 100W, Hybrid, 4.600 X 2.400 INCH, 0.500 INCH HEIGHT, MODULE-9; VI-B5L-IW
MJB44H11G

MJB44H11G

MJB44H11G Bipolar Power Transistor, NPN, 10 A, 80 V, 50 Watt, D2PAK 2 LEAD, 50-TUBE; MJB44H11G
S8006V

S8006V

S8006V Silicon Controlled Rectifier, 6A I(T)RMS, 3800mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-251AA, ROHS COMPLIANT, PLASTIC, IPAK-3; S8006V
IRG4PSH71KDPBF

IRG4PSH71KDPBF

IRG4PSH71KDPBF Insulated Gate Bipolar Transistor, 78A I(C), 1200V V(BR)CES, N-Channel, TO-274AA, LEAD FREE, SUPER-247, 3 PIN
MRF5S21130HSR3

MRF5S21130HSR3

MRF5S21130HSR3 RF Power Field-Effect Transistor; MRF5S21130HSR3
MA4P1250NM-1072T

MA4P1250NM-1072T

MA4P1250NM-1072T Pin Diode, 100V V(BR), Silicon, ROHS COMPLIANT, CERAMIC, CASE 1091, 2 PIN; MA4P1250NM-1072T
APTGT50DSK60T3G

APTGT50DSK60T3G

APTGT50DSK60T3G Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP3, 25 PIN; APTGT50DSK60T3G
MJE800STU

MJE800STU

MJE800STU 4.0 A, 60 V NPN Darlington Bipolar Power Transistor, 1920-TUBE; MJE800STU
MCMA140PD1600TB

MCMA140PD1600TB

MCMA140PD1600TB Silicon Controlled Rectifier, 140000mA I(T), 1600V V(RRM),; MCMA140PD1600TB