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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

IXYX120N120C3

IXYX120N120C3

IXYX120N120C3 Insulated Gate Bipolar Transistor, 220A I(C), 1200V V(BR)CES, N-Channel,; IXYX120N120C3
MCO450-20io1

MCO450-20io1

MCO450-20io1 Silicon Controlled Rectifier, 750A I(T)RMS, 464000mA I(T), 2000V V(DRM), 2000V V(RRM), 1 Element,; MCO450-20io1
BLF10M6LS200U

BLF10M6LS200U

BLF10M6LS200U RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2; BLF10M6LS200U
SI5944DU-T1-E3

SI5944DU-T1-E3

SI5944DU-T1-E3 Power Field-Effect Transistor, 6A I(D), 40V, 0.112ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, CHIPFET-8; SI5944DU-T1-E3
VI-J5X-EZ

VI-J5X-EZ

VI-J5X-EZ DC-DC Regulated Power Supply Module, 1 Output, 25W, Hybrid,; VI-J5X-EZ
VBO30-08NO7

VBO30-08NO7

VBO30-08NO7 Bridge Rectifier Diode, 1 Phase, 35A, 800V V(RRM), Silicon,; VBO30-08NO7
IRFU5505PBF

IRFU5505PBF

IRFU5505PBF Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, HALOGEN AND LEAD FREE, PLASTIC, IPAK-3; IRFU5505PBF
VI-BTZ-EU

VI-BTZ-EU

VI-BTZ-EU DC-DC Booster Module; VI-BTZ-EU
MUN2111T3G

MUN2111T3G

MUN2111T3G 100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, PLASTIC, CASE 318D-04, SC-59, 3 PIN; MUN2111T3G
IXBT20N300HV

IXBT20N300HV

IXBT20N300HV Insulated Gate Bipolar Transistor, 50A I(C), 3000V V(BR)CES, N-Channel,; IXBT20N300HV