SMA5132 Power Field-Effect Transistor, 1.5A I(D), 500V, 4ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMA, SIP-12; SMA5132
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.