MIO2400-17E10 Insulated Gate Bipolar Transistor, 2400A I(C), 1700V V(BR)CES, N-Channel, MODULE-9; MIO2400-17E10
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.