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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

DZ4J043K0R

DZ4J043K0R

DZ4J043K0R Zener Diode, 4.3V V(Z), 4.99%, 0.2W, Silicon, Unidirectional, HALOGEN FREE AND ROHS COMPLIANT, SMINI4-F3-B, SC-113BB, 4 PIN; DZ4J043K0R
T607081884BT

T607081884BT

T607081884BT Silicon Controlled Rectifier, 275A I(T)RMS, 275000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-93, TO-93, 3 PIN; T607081884BT
VI-B6J-CU

VI-B6J-CU

VI-B6J-CU DC-DC Booster Module, 1 Output, 200W, Hybrid, PACKAGE-9; VI-B6J-CU
Q6006VH3TP

Q6006VH3TP

Q6006VH3TP Alternistor TRIAC, 600V V(DRM), 6A I(T)RMS, TO-251AA, ROHS COMPLIANT, PLASTIC, VPAK-3; Q6006VH3TP
MB2S

MB2S

MB2S Bridge Rectifier Diode, 1 Phase, 0.5A, 200V V(RRM), Silicon, SOIC-4; MB2S
VI-26B-CY

VI-26B-CY

VI-26B-CY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-26B-CY
IXXH60N65B4

IXXH60N65B4

IXXH60N65B4 Insulated Gate Bipolar Transistor, 116A I(C), 650V V(BR)CES, N-Channel,; IXXH60N65B4
IXXN200N60B3

IXXN200N60B3

IXXN200N60B3 Insulated Gate Bipolar Transistor, 280A I(C), 600V V(BR)CES,; IXXN200N60B3
VVZ110-12IO7

VVZ110-12IO7

VVZ110-12IO7 Silicon Controlled Rectifier, 58A I(T)RMS, 110000mA I(T), 1200V V(DRM), 1200V V(RRM), 3 Element, MODULE-8; VVZ110-12IO7
DD104N18

DD104N18

DD104N18 Rectifier Diode, 1 Phase, 2 Element, 104A, 1800V V(RRM), Silicon, MODULE-3; DD104N18