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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

QSL11TR

QSL11TR

QSL11TR Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TSMT5, 5 PIN; QSL11TR
2SD2226KT146V

2SD2226KT146V

2SD2226KT146V Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SMT3, SC-59, 3 PIN; 2SD2226KT146V
DFM1200FXS12-A

DFM1200FXS12-A

DFM1200FXS12-A Rectifier Diode, 1 Phase, 2 Element, 1200A, 1200V V(RRM), Silicon, F, 4 PIN; DFM1200FXS12-A
2SC2258

2SC2258

2SC2258 Power Bipolar Transistor, 0.1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, TO-126B-A1, 3 PIN; 2SC2258
KS15-5

KS15-5

KS15-5 Power Supply Module,; KS15-5
DD60KB80

DD60KB80

DD60KB80 Rectifier Diode, 60A, 800V V(RRM),; DD60KB80
IXGP12N60C

IXGP12N60C

IXGP12N60C Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN; IXGP12N60C
T507108064AQ

T507108064AQ

T507108064AQ Silicon Controlled Rectifier, 125A I(T)RMS, 125000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-94, TO-94, 3 PIN; T507108064AQ
MID145-12A3

MID145-12A3

MID145-12A3 Insulated Gate Bipolar Transistor, 160A I(C), 1200V V(BR)CES, N-Channel, MODULE-7; MID145-12A3
VS-30CTQ060SPBF

VS-30CTQ060SPBF

VS-30CTQ060SPBF Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 60V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-220, D2PAK-3; VS-30CTQ060SPBF