IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VSKJ270-12

VSKJ270-12

VSKJ270-12 Rectifier Diode, 1 Phase, 2 Element, 270A, 1200V V(RRM), Silicon, ROHS COMPLIANT, MAGN-A-PAK-3; VSKJ270-12
AUIRGP4062D1-E

AUIRGP4062D1-E

AUIRGP4062D1-E Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel; AUIRGP4062D1-E
SGP30N60HS

SGP30N60HS

SGP30N60HS Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN; SGP30N60HS
BDT61A-S

BDT61A-S

BDT61A-S Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, FM-3; BDT61A-S
VI-B5F-IW

VI-B5F-IW

VI-B5F-IW DC-DC Booster Module, 100W; VI-B5F-IW
F1892D600

F1892D600

F1892D600 Rectifier Diode, 1 Phase, 1 Element, 90A, 600V V(RRM), Silicon, MODULE-2; F1892D600
T607061584BT

T607061584BT

T607061584BT Silicon Controlled Rectifier, 235A I(T)RMS, 235000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-93, TO-93, 3 PIN; T607061584BT
DDTB123EU-7-F

DDTB123EU-7-F

DDTB123EU-7-F Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, GREEN, PLASTIC PACKAGE-3; DDTB123EU-7-F
PS431415

PS431415

PS431415 Silicon Controlled Rectifier, 3300A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element, POW-R-BLOK-4; PS431415
MBM200GS6A

MBM200GS6A

MBM200GS6A Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, MODULE; MBM200GS6A