IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

MWI30-06A7

MWI30-06A7

MWI30-06A7 Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, SIXPACK-17; MWI30-06A7
MCMA25P1200TA

MCMA25P1200TA

MCMA25P1200TA Silicon Controlled Rectifier, 25000mA I(T), 1200V V(RRM),; MCMA25P1200TA
SF150AA20

SF150AA20

SF150AA20 Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET; SF150AA20
IXGH72N60C3

IXGH72N60C3

IXGH72N60C3 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN; IXGH72N60C3
TD56N08

TD56N08

TD56N08 Silicon Controlled Rectifier, 100A I(T)RMS, 56000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, MODULE-5; TD56N08
T507104034AQ

T507104034AQ

T507104034AQ Silicon Controlled Rectifier, 63A I(T)RMS, 63000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-94, TO-94, 3 PIN; T507104034AQ
MMBTA92LT3G

MMBTA92LT3G

MMBTA92LT3G High Voltage PNP Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 10000-REEL; MMBTA92LT3G
L4004D6RP

L4004D6RP

L4004D6RP 4 Quadrant Logic Level TRIAC, 400V V(DRM), 4A I(T)RMS, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3; L4004D6RP
MJE800G

MJE800G

MJE800G 4.0 A, 60 V NPN Darlington Bipolar Power Transistor, TO-225, 500-BLKBX; MJE800G
RS407L-BP

RS407L-BP

RS407L-BP Bridge Rectifier Diode, 1 Phase, 4A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, RS-4L, 4 PIN; RS407L-BP