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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

2STD1665T4

2STD1665T4

2STD1665T4 Low voltage fast-switching NPN power transistor; 2STD1665T4
APTGT150SK120TG

APTGT150SK120TG

APTGT150SK120TG Insulated Gate Bipolar Transistor, 220A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, SP4, 12 PIN; APTGT150SK120TG
2SD1949T106Q

2SD1949T106Q

2SD1949T106Q Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SC-70, 3 PIN; 2SD1949T106Q
VI-25Z-CV

VI-25Z-CV

VI-25Z-CV DC-DC Regulated Power Supply Module, 1 Output, Hybrid,; VI-25Z-CV
VI-2NY-IY

VI-2NY-IY

VI-2NY-IY DC-DC Regulated Power Supply Module, 1 Output, Hybrid,; VI-2NY-IY
VI-J11-EY

VI-J11-EY

VI-J11-EY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-J11-EY
C52P

C52P

C52P Silicon Controlled Rectifier, 110000mA I(T), 1000V V(DRM),; C52P
NJVMJD44H11G

NJVMJD44H11G

NJVMJD44H11G 8 A, 80 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE; NJVMJD44H11G
TYN812TRG

TYN812TRG

TYN812TRG 12A standard SCRs; TYN812TRG
C431PM1

C431PM1

C431PM1 Silicon Controlled Rectifier, 950A I(T)RMS, 600000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 Element, POW-R-DISC-4; C431PM1