IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

APT60DS04HJ

APT60DS04HJ

APT60DS04HJ Bridge Rectifier Diode, Schottky, 1 Phase, 60A, 45V V(RRM), Silicon, ROHS COMPLIANT, ISOTOP-4; APT60DS04HJ
MPSA14RLRPG

MPSA14RLRPG

MPSA14RLRPG NPN Bipolar Darlington Transistor, TO-92 (TO-226) 5.33mm Body Height, 2000-FNFLD; MPSA14RLRPG
VI-B24-EV

VI-B24-EV

VI-B24-EV DC-DC Booster Module; VI-B24-EV
MCC56-08IO8B

MCC56-08IO8B

MCC56-08IO8B Silicon Controlled Rectifier, 100A I(T)RMS, 60000mA I(T), 800V V(DRM), 800V V(RRM), 2 Element, TO-240AA, TO-240AA, 5 PIN; MCC56-08IO8B
CM150TU-12F

CM150TU-12F

CM150TU-12F IGBT Module In-stock / Mitsubishi: 600V 150A dual device. Proven F-Series reliability for motor drives. 90-day warranty. Global fast shipping. Get quote.
HSMS-280E-BLKG

HSMS-280E-BLKG

HSMS-280E-BLKG Mixer Diode, Silicon, ROHS COMPLIANT, SC-70, 3 PIN; HSMS-280E-BLKG
FS20R06XL4

FS20R06XL4

FS20R06XL4 Insulated Gate Bipolar Transistor, 26A I(C), 600V V(BR)CES, MODULE-16; FS20R06XL4
2SC5662T2LN

2SC5662T2LN

2SC5662T2LN RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, S Band, Silicon, NPN, VMT3, 3 PIN; 2SC5662T2LN
PS411825

PS411825

PS411825 Rectifier Diode, 1 Phase, 1 Element, 2500A, 1800V V(RRM), Silicon, POW-R-BLOK-2; PS411825
VI-21W-EW

VI-21W-EW

VI-21W-EW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid,; VI-21W-EW