IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VS-25TTS08FPPBF

VS-25TTS08FPPBF

VS-25TTS08FPPBF Silicon Controlled Rectifier, 16000mA I(T), 800V V(DRM),; VS-25TTS08FPPBF
VI-A33-IQ

VI-A33-IQ

VI-A33-IQ Analog Circuit, 1 Func, PACKAGE-9; VI-A33-IQ
VI-27M-CY

VI-27M-CY

VI-27M-CY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-27M-CY
STTH100W06CW

STTH100W06CW

STTH100W06CW 600 V, 100 A dual Ultrafast Rectifier Diode; STTH100W06CW
VI-2NT-EY

VI-2NT-EY

VI-2NT-EY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-2NT-EY
PH75F110-15

PH75F110-15

PH75F110-15 DC-DC Regulated Power Supply Module, 1 Output, 75W,; PH75F110-15
NSBC144EF3T5G

NSBC144EF3T5G

NSBC144EF3T5G NPN Bipolar Digital Transistor (BRT), SOT-1123, 1.0x0.6x0.37, 0.35P, 8000-REEL; NSBC144EF3T5G
MAGX-002731-180L00

MAGX-002731-180L00

MAGX-002731-180L00 RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, ROHS COMPLIANT, CERAMIC PACKAGE-2; MAGX-002731-180L00
S4X8ES2

S4X8ES2

S4X8ES2 Silicon Controlled Rectifier, 0.8A I(T)RMS, 800mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-92, TO-92, 3 PIN; S4X8ES2
IXGQ50N60C4D1

IXGQ50N60C4D1

IXGQ50N60C4D1 Insulated Gate Bipolar Transistor, 90A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN; IXGQ50N60C4D1