IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

APTGF50DH120T3G

APTGF50DH120T3G

APTGF50DH120T3G Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, SP3, 25 PIN; APTGF50DH120T3G
2SC4445

2SC4445

2SC4445 Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PF, FM100, 3 PIN; 2SC4445
2SB0951AQ

2SB0951AQ

2SB0951AQ Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3; 2SB0951AQ
PP1R5-12-5

PP1R5-12-5

PP1R5-12-5 Analog Circuit,; PP1R5-12-5
VS-P132

VS-P132

VS-P132 Silicon Controlled Rectifier,; VS-P132
SK30GD123D

SK30GD123D

SK30GD123D IGBT Module In-stock / SEMIKRON: 1200V 30A. Compact, efficient power control. 90-day warranty, inverter, UPS. Global fast shipping. Get quote.
CM150E3Y-12E

CM150E3Y-12E

CM150E3Y-12E IGBT Module In-stock / Mitsubishi: 600V 150A high-speed switching. 90-day warranty, AC motor control. Global fast shipping. Get quote.
CM1000HA-24E

CM1000HA-24E

CM1000HA-24E IGBT Module In-stock / Mitsubishi: 1200V 1000A. High-power density single switch. 90-day warranty, large VFDs. Request pricing now.
BSM150GAL100D

BSM150GAL100D

BSM150GAL100D Insulated Gate Bipolar Transistor, 150A I(C), 1000V V(BR)CES; BSM150GAL100D
FZ1200R12KE3

FZ1200R12KE3

FZ1200R12KE3 Infineon Technical Information IGBT Module 1200V 1200A~2400A