IGBT Modules - Transistors from Mitsubishi & Fuji - Page 3141

QM200HH-H

QM200HH-H 200A/600V/GTR/1U; QM200HH-H

MITSUBISHI Qty: 499pcs Price: US$31

IRF3315PBF

IRF3315PBF Power Field-Effect Transistor, 23A I(D), 150V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3; IRF3315PBF

International Rectifier Qty: 1489pcs

C156B

C156B Silicon Controlled Rectifier, 110000mA I(T), 200V V(DRM); C156B

Powerex Inc Qty: 291pcs

1DI400D-100

1DI400D-100 Darlington Module. 1000v/400a;

Fuji Qty: 137pcs Price: US$63

BZX84C12TS-7-F

BZX84C12TS-7-F Zener Diode, 12V V(Z), 5.39%, 0.2W, Silicon, Unidirectional, GREEN, ULTRA SMALL, PLASTIC PACKAGE-6; BZX84C12TS-7-F

Diodes Inc Qty: 980pcs

IXFN26N90

IXFN26N90 Power Field-Effect Transistor, 26A I(D), 900V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4; IXFN26N90

IXYS Qty: 288pcs

IXFK55N50

IXFK55N50 Power Field-Effect Transistor, 55A I(D), 500V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN; IXFK55N50

IXYS Qty: 890pcs

IXFK360N15T2

IXFK360N15T2 Power Field-Effect Transistor, 360A I(D), 150V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN; IXFK360N15T2

IXYS Qty: 1713pcs

VI-B1X-EV

VI-B1X-EV DC-DC Booster Module, 150W; VI-B1X-EV

VICOR Qty: -52pcs

MG30J6ES11

MG30J6ES11 IGBT Module In-stock / Toshiba: 600V 30A integrated 6-in-1 power stage. 90-day warranty, for motor drives. Global fast shipping. Get quote.

Toshiba Qty: 70pcs Price: US$27