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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

DMC502010R

DMC502010R

DMC502010R Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI5-F3-B, SC-113CB, 5 PIN; DMC502010R
FDMC7208S

FDMC7208S

FDMC7208S Dual N-Channel PowerTrench® MOSFET 30V, 3000-REEL; FDMC7208S
HUF76609D3ST

HUF76609D3ST

HUF76609D3ST N-Channel Logic Level UltraFET Power MOSFET 100V, 10A, 165mΩ, 2500-REEL; HUF76609D3ST
MAC228A10

MAC228A10

MAC228A10 Sensitive Gate Triac, TO-220 3 LEAD STANDARD, 500-BLKBX; MAC228A10
PD40F40

PD40F40

PD40F40 Silicon Controlled Rectifier, 40000mA I(T), 400V V(RRM); PD40F40
CM1400DUC-24NF

CM1400DUC-24NF

CM1400DUC-24NF Mitsubishi Electric IGBT module, rated 1200 V and 1400 A. Review gate-drive, cooling and replacement checks for battery storage PCS.
BLF8G22LS-220J

BLF8G22LS-220J

BLF8G22LS-220J RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2; BLF8G22LS-220J
BC847BV-TP

BC847BV-TP

BC847BV-TP Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon, LEAD FREE, ULTRA SMALL, PLASTIC PACKAGE-6; BC847BV-TP
BAP51-02-TP

BAP51-02-TP

BAP51-02-TP Pin Diode, 60V V(BR), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2; BAP51-02-TP
2MBI50N-120

2MBI50N-120

2MBI50N-120 IGBT Module In-stock / Fuji Electric: 1200V 50A. High-speed, reliable power switching. 90-day warranty, Inverters. Global fast shipping. Get quote.