IGBT

IXFN30N120P

IXFN30N120P Power Field-Effect Transistor, 30A I(D), 1200V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4; IXFN30N120P

IXYS Qty: 199pcs

IXFN24N100

IXFN24N100 Power Field-Effect Transistor, 24A I(D), 1000V, 0.39ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4; IXFN24N100

IXYS Qty: 211pcs

IXFN140N20P

IXFN140N20P Power Field-Effect Transistor, 115A I(D), 200V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4; IXFN140N20P

IXYS Qty: 353pcs

IXFK80N60P3

IXFK80N60P3 Power Field-Effect Transistor, 80A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3; IXFK80N60P3

IXYS Qty: 960pcs

IXFK230N20T

IXFK230N20T Power Field-Effect Transistor, 230A I(D), 200V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN; IXFK230N20T

IXYS Qty: 1389pcs

IXFH12N100

IXFH12N100 Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN; IXFH12N100

IXYS Qty: 1252pcs

IXDN55N120D1

IXDN55N120D1 IGBT Module In-stock / IXYS: 1200V 55A. Fast switching with Sonic-FRD. 90-day warranty, SMPS applications. Global shipping. Get quote.

IXYS Qty: 446pcs

VUE75-12NO7

VUE75-12NO7 Bridge Rectifier Diode, 3 Phase, 74A, 1200V V(RRM), Silicon, ECOPAC-5; VUE75-12NO7

IXYS Qty: 1082pcs

VUC25-12GO2

VUC25-12GO2 Silicon Controlled Rectifier, 40.82A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, MODULE-8; VUC25-12GO2

IXYS Qty: 723pcs

VUB160-16NO2

VUB160-16NO2 Insulated Gate Bipolar Transistor, 177A I(C), 1200V V(BR)CES, N-Channel, MODULE-17; VUB160-16NO2

IXYS Qty: 2350pcs