IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

APT35GT120JU3

APT35GT120JU3

APT35GT120JU3 Insulated Gate Bipolar Transistor, 55A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, ISOTOP-4; APT35GT120JU3
R7200806

R7200806

R7200806 Powerex Rectifier Diode, 1 Phase, 1 Element, 600A, 800V, Silicon
VDI25-06P1

VDI25-06P1

VDI25-06P1 Insulated Gate Bipolar Transistor, 24.5A I(C), 600V V(BR)CES, N-Channel, ECOPAC-10; VDI25-06P1
IRG4PH50KDPBF

IRG4PH50KDPBF

IRG4PH50KDPBF Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3; IRG4PH50KDPBF
BSM181

BSM181

BSM181 Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET; BSM181
DSA30C45PC

DSA30C45PC

DSA30C45PC Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-263AB, D2PAK-3/2; DSA30C45PC
VI-22F-IX

VI-22F-IX

VI-22F-IX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-22F-IX
A50P700-4TA

A50P700-4TA

A50P700-4TA Electric Fuse, Very Fast Blow, 700A, 500VAC, 450VDC, 100000A (IR), Inline/holder,; A50P700-4TA
CDD11210

CDD11210

CDD11210 Rectifier Diode, 1 Phase, 2 Element, 100A, 1200V V(RRM), Silicon, POW-R-BLOK-3; CDD11210
2SD1383KT146B

2SD1383KT146B

2SD1383KT146B Small Signal Bipolar Transistor, 0.3A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, SMT3, 3 PIN; 2SD1383KT146B