APT35GT120JU3 Insulated Gate Bipolar Transistor, 55A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, ISOTOP-4; APT35GT120JU3
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.