IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

FK3506010L

FK3506010L

FK3506010L Small Signal Field-Effect Transistor, 0.1A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SMINI3-F2-B, SC-85, 3 PIN; FK3506010L
DMG964H30R

DMG964H30R

DMG964H30R Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSMINI6-F3-B, SC-107C, 6 PIN; DMG964H30R
BLP8G10S-45PGY

BLP8G10S-45PGY

BLP8G10S-45PGY RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, HSOP-4; BLP8G10S-45PGY
SMUN2214T1G

SMUN2214T1G

SMUN2214T1G NPN Bipolar Digital Transistor (BRT), SC-59 3 LEAD, 3000-REEL; SMUN2214T1G
VI-B1W-EV

VI-B1W-EV

VI-B1W-EV DC-DC Booster Module, 150W; VI-B1W-EV
VI-J2N-IX

VI-J2N-IX

VI-J2N-IX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-J2N-IX
SW18HHR320

SW18HHR320

SW18HHR320 Rectifier Diode, 1 Phase, 1 Element, 320A, 1800V V(RRM), Silicon,; SW18HHR320
MCMA50P1600TA

MCMA50P1600TA

MCMA50P1600TA Silicon Controlled Rectifier, 50000mA I(T), 1600V V(RRM),; MCMA50P1600TA
TD210N08

TD210N08

TD210N08 Silicon Controlled Rectifier 410A I(T)RMS 210000mA I(T) 800V V(DRM) 800V V(RRM) 1 Element; TD210N08
PT200S16

PT200S16

PT200S16 Bridge Rectifier Diode, 3 Phase, 200A, 1600V V(RRM), Silicon; PT200S16