IRG7PH44K10D-EPBF Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel; IRG7PH44K10D-EPBF
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.