IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

IXGH12N60C

IXGH12N60C

IXGH12N60C Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN; IXGH12N60C
KBPC3510-G

KBPC3510-G

KBPC3510-G Bridge Rectifier Diode, 35A, 1000V V(RRM),; KBPC3510-G
VI-BWB-EU

VI-BWB-EU

VI-BWB-EU DC-DC Booster Module; VI-BWB-EU
KSD560OTU

KSD560OTU

KSD560OTU Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin; KSD560OTU
VI-B33-CU

VI-B33-CU

VI-B33-CU DC-DC Booster Module, 1 Output, 200W, Hybrid, PACKAGE-9; VI-B33-CU
Q8008NH4RP

Q8008NH4RP

Q8008NH4RP Alternistor TRIAC, 800V V(DRM), 8A I(T)RMS, TO-263AB, TO-263, D2PAK-3; Q8008NH4RP
PAF600F280-24/T

PAF600F280-24/T

PAF600F280-24/T DC DC CONVERTER 14.4-28.8V 600W;
2DI150M-120

2DI150M-120

2DI150M-120 150A/1200V/GTR/2U; 2DI150M-120
2N7002DW-7

2N7002DW-7

2N7002DW-7 Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, ULTRA SMALL, PLASTIC PACKAGE-6; 2N7002DW-7
VI-B7V-EU

VI-B7V-EU

VI-B7V-EU DC-DC Booster Module; VI-B7V-EU