IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

FC250H1

FC250H1

FC250H1 1-OUTPUT 250W DC-DC REG PWR SUPPLY MODULE, 116.80 X 61 MM, 13.50 MM HEIGHT, MODULE-20; FC250H1
MMBZ5229BS-7

MMBZ5229BS-7

MMBZ5229BS-7 Zener Diode, 4.3V V(Z), 4.99%, 0.2W, Silicon, Unidirectional, ULTRA SMALL, PLASTIC PACKAGE-6; MMBZ5229BS-7
MJE5850

MJE5850

MJE5850 8.0 A, 300 V PNP Bipolar Power Transistor, TO-220 3 LEAD STANDARD, 50-TUBE; MJE5850
MCH6203-TL-E

MCH6203-TL-E

MCH6203-TL-E Bipolar Transistor, (-)50V, (-)1A, Low VCE(sat), (PNP)NPN Single MCPH6, SC 88FL / MCPH6, 3000-REEL; MCH6203-TL-E
L6X8E3

L6X8E3

L6X8E3 4 Quadrant Logic Level TRIAC, 600V V(DRM), 0.8A I(T)RMS, TO-92, ROHS COMPLIANT, PLASTIC, COMPAK-2; L6X8E3
IXXK160N65B4

IXXK160N65B4

IXXK160N65B4 Insulated Gate Bipolar Transistor, 310A I(C), 650V V(BR)CES, N-Channel,; IXXK160N65B4
DMC204A00R

DMC204A00R

DMC204A00R Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 2-Element, NPN and PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, MINI6-G4-B, SC-74, 6 PIN; DMC204A00R
DB25-08

DB25-08

DB25-08 Bridge Rectifier Diode, 3 Phase, 25A, 800V V(RRM), Silicon, 28.50 X 28.50 MM, 10 MM HEIGHT, ROHS COMPLIANT, PLASTIC PACKAGE-5; DB25-08
CTA16-1200CPT

CTA16-1200CPT

CTA16-1200CPT TRIAC, 1200V V(DRM), 16A I(T)RMS, TO-220AB, TO-220AB, 3 PIN; CTA16-1200CPT
CTA08-1200BWPT

CTA08-1200BWPT

CTA08-1200BWPT Alternistor TRIAC, 1200V V(DRM), 8A I(T)RMS, TO-220AB, TO-220AB, 3 PIN; CTA08-1200BWPT