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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VWO36-16IO7

VWO36-16IO7

VWO36-16IO7 Silicon Controlled Rectifier, 28A I(T)RMS, 18000mA I(T), 1600V V(DRM), 1600V V(RRM), 6 Element, MODULE-12; VWO36-16IO7
US6U37TR

US6U37TR

US6U37TR Small Signal Field-Effect Transistor, 1.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TUMT6, 6 PIN; US6U37TR
PAH150S48-2.5

PAH150S48-2.5

PAH150S48-2.5 DC-DC Regulated Power Supply Module, 1 Output, 150W, Hybrid,; PAH150S48-2.5
MSG180L41

MSG180L41

MSG180L41 Silicon Controlled Rectifier, 140 A, 800 V, SCR; MSG180L41
MDD310-20N1

MDD310-20N1

MDD310-20N1 Rectifier Diode, 1 Phase, 2 Element, 305A, 2000V V(RRM), Silicon,; MDD310-20N1
LS432043

LS432043

LS432043 Silicon Controlled Rectifier, 800A I(T)RMS, 2000V V(DRM), 2000V V(RRM), 1 Element, POW-R-BLOK-4; LS432043
HSMP-389R-TR2G

HSMP-389R-TR2G

HSMP-389R-TR2G Pin Diode, 100V V(BR), Silicon, LEAD FREE PACKAGE-6; HSMP-389R-TR2G
VI-2NJ-IV

VI-2NJ-IV

VI-2NJ-IV DC-DC Regulated Power Supply Module, 1 Output, 150W, Hybrid,; VI-2NJ-IV
CD430840

CD430840

CD430840 Silicon Controlled Rectifier, 63A I(T)RMS, 40000mA I(T), 800V V(DRM), 800V V(RRM), 2 Element, POW-R-BLOK-7; CD430840
VUB72-12NO1

VUB72-12NO1

VUB72-12NO1 Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel,; VUB72-12NO1