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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

BD239B-S

BD239B-S

BD239B-S Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, FM-3; BD239B-S
BC850CMTF

BC850CMTF

BC850CMTF NPN Epitaxial Silicon Transistor, 3000-REEL; BC850CMTF
BC847BW-TP

BC847BW-TP

BC847BW-TP Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3; BC847BW-TP
APTLGF300A1208G

APTLGF300A1208G

APTLGF300A1208G Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES,; APTLGF300A1208G
APTGT100DA120TG

APTGT100DA120TG

APTGT100DA120TG Insulated Gate Bipolar Transistor, 140A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, SP4, 12 PIN; APTGT100DA120TG
AOTF27S60L

AOTF27S60L

AOTF27S60L Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET; AOTF27S60L
A70Q500-4

A70Q500-4

A70Q500-4 Electric Fuse, Fast Blow, 500A, 700VAC, 650VDC, 100000A (IR), Inline/holder,; A70Q500-4
94MT140KB

94MT140KB

94MT140KB Silicon Controlled Rectifier, 90A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 6 Element, INT-A-PAK-12; 94MT140KB
3STR1630

3STR1630

3STR1630 6000mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, PLASTIC PACKAGE-3; 3STR1630
2SK596S-B

2SK596S-B

2SK596S-B JFET, 20V, 150 to 350µA, 1.0mS, N-Channel, TO-92 3 3.0x4.0 / SPA, 500-BLKBG; 2SK596S-B