IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

MUR30060CTR

MUR30060CTR

MUR30060CTR 600V 300A Silicon Super Fast Recovery Rectifier in Twin Tower Package; MUR30060CTR
ULN2003ADRG3

ULN2003ADRG3

ULN2003ADRG3 High-Voltage, High-Current Darlington Transistor Arrays 16-SOIC -20 to 70; ULN2003ADRG3
2N3810

2N3810

2N3810 Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, TO-78, TO-78, 8 PIN; 2N3810
VI-JTR-CW

VI-JTR-CW

VI-JTR-CW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid,; VI-JTR-CW
DIM400GCM33-F

DIM400GCM33-F

DIM400GCM33-F Insulated Gate Bipolar Transistor, 400A I(C), 3300V V(BR)CES, N-Channel, G, MODULE-10; DIM400GCM33-F
SIA931DJ-T1-GE3

SIA931DJ-T1-GE3

SIA931DJ-T1-GE3 Small Signal Field-Effect Transistor,; SIA931DJ-T1-GE3
VSKE250-12

VSKE250-12

VSKE250-12 Rectifier Diode, 1 Phase, 1 Element, 250A, 1200V V(RRM), Silicon, ROHS COMPLIANT, MAGN-A-PAK-2; VSKE250-12
DTA143XMT2L

DTA143XMT2L

DTA143XMT2L Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, VMT3, 3 PIN; DTA143XMT2L
CD431490C

CD431490C

CD431490C Silicon Controlled Rectifier; CD431490C
MCO600-20io1

MCO600-20io1

MCO600-20io1 Silicon Controlled Rectifier, 928A I(T)RMS, 600000mA I(T), 2000V V(DRM), 2000V V(RRM), 1 Element, MODULE-4; MCO600-20io1