IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

ZXMN3AMCTA

ZXMN3AMCTA

ZXMN3AMCTA Power Field-Effect Transistor, 2.9A I(D), 30V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, DFN3020B-8, 8 PIN; ZXMN3AMCTA
V24A12C400AL3

V24A12C400AL3

V24A12C400AL3 DC-DC Regulated Power Supply Module, 1 Output, 400W, Hybrid; V24A12C400AL3
MBRP30060CT

MBRP30060CT

MBRP30060CT 150A, 60V, SILICON, RECTIFIER DIODE, PLASTIC, CASE 357C-03, POWERTAP II, 2 PIN; MBRP30060CT
R6221040HSOO

R6221040HSOO

R6221040HSOO Rectifier Diode, 1 Phase, 1 Element, 400A, 1000V V(RRM), Silicon,; R6221040HSOO
VI-B5K-IU

VI-B5K-IU

VI-B5K-IU DC-DC Booster Module, 1 Output, 200W, Hybrid, PACKAGE-9; VI-B5K-IU
PP3-48-5

PP3-48-5

PP3-48-5 Analog Circuit,; PP3-48-5
T507107084AQ

T507107084AQ

T507107084AQ Silicon Controlled Rectifier, 110A I(T)RMS, 110000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-94, TO-94, 3 PIN; T507107084AQ
VS-48CTQ060PBF

VS-48CTQ060PBF

VS-48CTQ060PBF Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 60V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3; VS-48CTQ060PBF
CM800E3UA-24F

CM800E3UA-24F

CM800E3UA-24F Mitsubshi High power switching use insulated type 800A 1200V 175°C
SP8M10FU6TB

SP8M10FU6TB

SP8M10FU6TB Transistor; SP8M10FU6TB