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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

CTB12-1200CWPT

CTB12-1200CWPT

CTB12-1200CWPT Alternistor TRIAC, 1200V V(DRM), 12A I(T)RMS, TO-220AB, TO-220AB, 3 PIN; CTB12-1200CWPT
KD324510HB

KD324510HB

KD324510HB Power Bipolar Transistor, 100A I(C), 450V V(BR)CEO, 2-Element, NPN, Silicon; KD324510HB
HSMS-286P-TR2G

HSMS-286P-TR2G

HSMS-286P-TR2G Mixer Diode, C Band, Silicon, ROHS COMPLIANT, MINIATURE, SC-70, 6 PIN; HSMS-286P-TR2G
CPT30060D

CPT30060D

CPT30060D Rectifier Diode, Schottky, 1 Phase, 2 Element, 150A, 60V V(RRM), Silicon, PACKAGE-2; CPT30060D
KBJ6005G

KBJ6005G

KBJ6005G Bridge Rectifier Diode, 1 Phase, 6A, 50V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, KBJ, 4 PIN; KBJ6005G
Q4015N5TP

Q4015N5TP

Q4015N5TP TRIAC, 400V V(DRM), 15A I(T)RMS, TO-263AB, TO-263, D2PAK-3; Q4015N5TP
J2-Q16A-C

J2-Q16A-C

J2-Q16A-C IGBT Module In-stock / Mitsubishi: 1200V 16A. Reliable power conversion. 90-day warranty, servo motor drive. Global shipping. Request pricing now.
MUR30060CTR

MUR30060CTR

MUR30060CTR 600V 300A Silicon Super Fast Recovery Rectifier in Twin Tower Package; MUR30060CTR
ULN2003ADRG3

ULN2003ADRG3

ULN2003ADRG3 High-Voltage, High-Current Darlington Transistor Arrays 16-SOIC -20 to 70; ULN2003ADRG3
2N3810

2N3810

2N3810 Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, TO-78, TO-78, 8 PIN; 2N3810