IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

AON6812

AON6812

AON6812 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,; AON6812
VUO52-14NO1

VUO52-14NO1

VUO52-14NO1 Bridge Rectifier Diode, 3 Phase, 54A, 1400V V(RRM), Silicon, ROHS COMPLIANT, MODULE-7; VUO52-14NO1
IRG4RC10UDTRRP

IRG4RC10UDTRRP

IRG4RC10UDTRRP Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3; IRG4RC10UDTRRP
T9G0161203DH

T9G0161203DH

T9G0161203DH Silicon Controlled Rectifier, 1884A I(T)RMS, 1200000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 Element, T9G, 3 PIN; T9G0161203DH
PP10-48-12

PP10-48-12

PP10-48-12 Analog Circuit,; PP10-48-12
VI-223-CU

VI-223-CU

VI-223-CU DC-DC Regulated Power Supply Module, 1 Output, 200W, Hybrid,; VI-223-CU
HAS030ZG-A

HAS030ZG-A

HAS030ZG-A DC-DC Regulated Power Supply Module, 1 Output, 30W, Hybrid, PACKAGE-9; HAS030ZG-A
VI-JTJ-EZ

VI-JTJ-EZ

VI-JTJ-EZ DC-DC Regulated Power Supply Module, 1 Output, 25W, Hybrid,; VI-JTJ-EZ
VI-BT1-CV

VI-BT1-CV

VI-BT1-CV DC-DC Booster Module, 1 Output, 150W, Hybrid, PACKAGE-9; VI-BT1-CV
ND600N14

ND600N14

ND600N14 Rectifier Diode, 1 Phase, 1 Element, 600A, 1400V V(RRM), Silicon, MODULE-3; ND600N14