IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

BSM15GD120DLC

BSM15GD120DLC

BSM15GD120DLC Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, MODULE-17; BSM15GD120DLC
MPSW63G

MPSW63G

MPSW63G TRANSISTOR 500 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-10, TO-226AE, 3 PIN, BIP General Purpose Small Signal; MPSW63G
LS412060

LS412060

LS412060 Rectifier Diode, 1 Phase, 1 Element, 600A, 2000V V(RRM), Silicon, POW-R-BLOK-2; LS412060
Z0103MARLRPG

Z0103MARLRPG

Z0103MARLRPG 600 V, 1.0 A Triac Z0103MA, Z0107MA, Z0109MA, TO-92 (TO-226) 5.33mm Body Height, 2000-FNFLD; Z0103MARLRPG
MDI75-12A3

MDI75-12A3

MDI75-12A3 Insulated Gate Bipolar Transistor, 90A I(C), 1200V V(BR)CES, N-Channel, MODULE-7; MDI75-12A3
C180CX500

C180CX500

C180CX500 Silicon Controlled Rectifier, 300A I(T)RMS, 255000mA I(T), 300V V(DRM), 300V V(RRM), 1 Element,; C180CX500
VS-25RIA40

VS-25RIA40

VS-25RIA40 Silicon Controlled Rectifier,; VS-25RIA40
SKIIP83ANB15T40

SKIIP83ANB15T40

SKIIP83ANB15T40 IGBT Module In-stock / Semikron: 1200V 35A. Trench4 CIB topology for industrial drives. 90-day warranty. Fast shipping. Get quote.
MMJT350T1

MMJT350T1

MMJT350T1 500mA, 300V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-261AA, PLASTIC, CASE 318E-04, TO-261, 4 PIN; MMJT350T1
SP8K5TB

SP8K5TB

SP8K5TB Power Field-Effect Transistor, 3.5A I(D), 30V, 0.15ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8; SP8K5TB