IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-B1T-IV

VI-B1T-IV

VI-B1T-IV DC-DC Booster Module, 1 Output, 150W, Hybrid, PACKAGE-9; VI-B1T-IV
PTMB50B12

PTMB50B12

PTMB50B12 Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-19; PTMB50B12
VI-J6Z-CW

VI-J6Z-CW

VI-J6Z-CW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid, HALF BRICK PACKAGE-9; VI-J6Z-CW
T507147064AQ

T507147064AQ

T507147064AQ Silicon Controlled Rectifier, 110A I(T)RMS, 110000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element, TO-94, TO-94, 3 PIN; T507147064AQ
MUN5137DW1T1

MUN5137DW1T1

MUN5137DW1T1 TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, CASE 419B-02, SC-70, SC-88, 6 PIN, BIP General Purpose Small Signal; MUN5137DW1T1
ND471825

ND471825

ND471825 POW-R-BLOKTM Dual SCR/Diode Isolated Module 250 Amperes / Up to 1800 Volts
VI-BTL-EW

VI-BTL-EW

VI-BTL-EW DC-DC Booster Module, 1 Output, 100W, Hybrid, 4.600 X 2.400 INCH, 0.500 INCH HEIGHT, MODULE-9; VI-BTL-EW
SW25CXC950

SW25CXC950

SW25CXC950 Rectifier Diode, 1 Phase, 1 Element, 2420A, 2500V V(RRM), Silicon,; SW25CXC950
STC04IE170HV

STC04IE170HV

STC04IE170HV Monolithic emitter switched bipolar transistor ESBT® 1700 V - 4 A - 0.17 ®; STC04IE170HV
VI-25Y-EW

VI-25Y-EW

VI-25Y-EW DC-DC Regulated Power Supply Module, 1 Output, Hybrid,; VI-25Y-EW