IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

PAT308AC

PAT308AC

PAT308AC Silicon Controlled Rectifier, 66A I(T)RMS, 800V V(DRM), 2 Element, MODULE-8; PAT308AC
MCC94-24IO1B

MCC94-24IO1B

MCC94-24IO1B Silicon Controlled Rectifier, 180A I(T)RMS, 104000mA I(T), 2400V V(DRM), 2400V V(RRM), 2 Element, TO-240AA, TO-240AA, 7 PIN; MCC94-24IO1B
IRG4BC20FD

IRG4BC20FD

IRG4BC20FD Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN; IRG4BC20FD
PBMB200B12

PBMB200B12

PBMB200B12 Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-14; PBMB200B12
HTZ160C19K

HTZ160C19K

HTZ160C19K Rectifier Diode, 1 Phase, 2 Element, 1.7A, 19200V V(RRM), Silicon, ZC, 3 PIN; HTZ160C19K
VI-B3P-CW

VI-B3P-CW

VI-B3P-CW DC-DC Booster Module, 100W; VI-B3P-CW
S4008VTP

S4008VTP

S4008VTP Silicon Controlled Rectifier, 8A I(T)RMS, 5100mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-251AA, ROHS COMPLIANT, PLASTIC, V/IPAK-3; S4008VTP
BAS16DXV6T5G

BAS16DXV6T5G

BAS16DXV6T5G 0.2A, 100V, 2 ELEMENT, SILICON, SIGNAL DIODE, LEAD FREE, PLASTIC, CASE 463A-01, 6 PIN; BAS16DXV6T5G
PCHMB300A6AC

PCHMB300A6AC

PCHMB300A6AC Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, MODULE-5; PCHMB300A6AC
D2009

D2009

D2009 Stepper Motor Controller, 1.2A, BIPolar, PDSO40, HSOP-40/42; D2009