IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

MITA10WB1200TMH

MITA10WB1200TMH

MITA10WB1200TMH Insulated Gate Bipolar Transistor, 17A I(C), 1200V V(BR)CES, N-Channel, MODULE-23; MITA10WB1200TMH
AUIRGDC0250

AUIRGDC0250

AUIRGDC0250 Insulated Gate Bipolar Transistor, 141A I(C), 1200V V(BR)CES, N-Channel,; AUIRGDC0250
MDI300-12A4

MDI300-12A4

MDI300-12A4 Insulated Gate Bipolar Transistor, 330A I(C), 1200V V(BR)CES, N-Channel, MODULE-7; MDI300-12A4
2FI100G-100N

2FI100G-100N

2FI100G-100N Rectifier Diode, 1 Phase, 2 Element, 100A, 1000V V(RRM), Silicon, R201, 3 PIN; 2FI100G-100N
PS21562-SP

PS21562-SP

PS21562-SP AC Motor Controller, 10A, Hybrid, LEAD FREE, DIP-37; PS21562-SP
CPT40090D

CPT40090D

CPT40090D Rectifier Diode, Schottky, 1 Phase, 2 Element, 200A, 90V V(RRM), Silicon, PACKAGE-2; CPT40090D
RN1605TE85LF

RN1605TE85LF

RN1605TE85LF PRE-BIASED inchDIGITAL inch TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP; RN1605TE85LF
MRF6S19060NR1

MRF6S19060NR1

MRF6S19060NR1 L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270; MRF6S19060NR1
PDT40012

PDT40012

PDT40012 Silicon Controlled Rectifier, 630A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 2 Element,; PDT40012
CN240650

CN240650

CN240650 Rectifier Diode, 1 Phase, 2 Element, 50A, 600V V(RRM), Silicon,; CN240650