IXA55I1200HJ Insulated Gate Bipolar Transistor, 84A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, PLASTIC, ISOPLUS247, 3 PIN; IXA55I1200HJ
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.