IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

BD246B-S

BD246B-S

BD246B-S Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC, FM-3; BD246B-S
CDBHM160L-G

CDBHM160L-G

CDBHM160L-G Rectifier Diode, Schottky, 4 Element, 1A, 60V V(RRM),; CDBHM160L-G
MSKD100-18

MSKD100-18

MSKD100-18 Rectifier Diode, 1 Phase, 2 Element, 100A, 1800V V(RRM), Silicon, CASE D1, 3 PIN; MSKD100-18
V24C48C100A

V24C48C100A

V24C48C100A DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid; V24C48C100A
FC400R1

FC400R1

FC400R1 1-OUTPUT 400W DC-DC REG PWR SUPPLY MODULE; FC400R1
GBJ2506-G

GBJ2506-G

GBJ2506-G Bridge Rectifier Diode, 25A, 600V V(RRM),; GBJ2506-G
C391PD

C391PD

C391PD Silicon Controlled Rectifier, 770A I(T)RMS, 490000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element,; C391PD
BAW56-TP

BAW56-TP

BAW56-TP Rectifier Diode, 2 Element, 0.25A, 75V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3; BAW56-TP
L4006L6

L4006L6

L4006L6 4 Quadrant Logic Level TRIAC, 600V V(DRM), 6A I(T)RMS, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3; L4006L6
VID130-06P1

VID130-06P1

VID130-06P1 Insulated Gate Bipolar Transistor, 121A I(C), 600V V(BR)CES, N-Channel, ECOPAC-13; VID130-06P1