IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-2T4-IV

VI-2T4-IV

VI-2T4-IV DC-DC Regulated Power Supply Module, 1 Output, 150W, Hybrid, MODULE-9; VI-2T4-IV
CBS3502424

CBS3502424

CBS3502424 DC-DC Regulated Power Supply Module, 1 Output, 348W, Hybrid, ROHS COMPLIANT, PACKAGE-9; CBS3502424
MCC220-08IO1

MCC220-08IO1

MCC220-08IO1 Silicon Controlled Rectifier, 400A I(T)RMS, 400000mA I(T), 800V V(DRM), 800V V(RRM), 2 Element, MODULE-7; MCC220-08IO1
VI-2TV-IW

VI-2TV-IW

VI-2TV-IW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid,; VI-2TV-IW
FD600R12KF4

FD600R12KF4

FD600R12KF4 Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-7; FD600R12KF4
7MBP75KB060

7MBP75KB060

7MBP75KB060 power transistor module ;
M5060THC600

M5060THC600

M5060THC600 Rectifier Diode, 1 Phase, 3 Element, 60A, 600V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-4; M5060THC600
Q4006NH4TP

Q4006NH4TP

Q4006NH4TP Alternistor TRIAC, 600V V(DRM), 6A I(T)RMS, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2; Q4006NH4TP
2SA1381CSTU

2SA1381CSTU

2SA1381CSTU Small Signal Bipolar Transistor; 2SA1381CSTU
FS35R12KE3G

FS35R12KE3G

FS35R12KE3G Insulated Gate Bipolar Transistor, 55A I(C), 1200V V(BR)CES, N-Channel, MODULE-28; FS35R12KE3G