APTGT25DA120D1G Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, MODULE-7; APTGT25DA120D1G
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.