IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

APTGT25DA120D1G

APTGT25DA120D1G

APTGT25DA120D1G Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, MODULE-7; APTGT25DA120D1G
MSCD165-08

MSCD165-08

MSCD165-08 Rectifier Diode, 1 Phase, 2 Element, 165A, 800V V(RRM), Silicon, CASE D2, 3 PIN; MSCD165-08
VI-BNW-IW

VI-BNW-IW

VI-BNW-IW DC-DC Booster Module, 100W; VI-BNW-IW
VI-BWB-IV

VI-BWB-IV

VI-BWB-IV DC-DC Booster Module, 1 Output, 150W, Hybrid, PACKAGE-9; VI-BWB-IV
BDW23A-S

BDW23A-S

BDW23A-S Power Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, FM-3; BDW23A-S
BDX53CTU

BDX53CTU

BDX53CTU Medium Power NPN Darlington Bipolar Power Transistor, 1000-TUBE; BDX53CTU
GBJ1002-BP

GBJ1002-BP

GBJ1002-BP Bridge Rectifier Diode, 1 Phase, 10A, 200V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBJ, 4 PIN; GBJ1002-BP
HFA70NH60R

HFA70NH60R

HFA70NH60R DIODE 70 A, SILICON, RECTIFIER DIODE, Rectifier Diode; HFA70NH60R
VI-26H-IU

VI-26H-IU

VI-26H-IU DC-DC Regulated Power Supply Module, 1 Output, 200W, Hybrid, PACKAGE-9; VI-26H-IU
VSKT250-12

VSKT250-12

VSKT250-12 Silicon Controlled Rectifier, 555A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 2 Element, MAGN-A-PAK-7; VSKT250-12